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wrote a column · Dec 9, 2021 16:11 ·

Saijing IGBT chips were delivered in batches for the first time to NEV customers

Recently, IGBT chips independently developed by Saijing Asia Pacific Semiconductor Technology (Zhejiang) Co., Ltd. (hereinafter referred to as “Saijing Semiconductor”), a subsidiary of Saijing Technology, completed the first official batch delivery (in the form of wafers) to customers in the NEV passenger car market. This indicates that iGBT chips using Saijing i20 technology have been recognized by mainstream NEV manufacturers in the market and have begun to be sold in batches.
In addition, Saijing Semiconductor's module products using entirely autonomous IGBT chips are also being tested and verified with new energy passenger vehicle customers.
Recently, IGBT chips independently developed by Saijing Asia Pacific Semiconductor Technology (Zhejiang) Co., Ltd. (hereinafter referred to as “Saijing Semiconductor”), a subsidiary of Saijing Technology, completed the first official batch delivery (in the form of wafers) to customers in the NEV passenger car market. This indicates that iGBT chips using Saijing i20 technology have been recognized by mainstream NEV manufacturers in the market and have begun to be sold in batches. In addition, Saijing Semiconductor's module products using entirely autonomous IGBT chips are also being tested and verified with new energy passenger vehicle customers. The IGBT chip independently developed by Saijing that was delivered this time has a rated voltage of 1200V and a rated current of 250A. Using the current mainstream FS-trench structure, many optimizations such as N-type reinforcement, narrow table surface, short channel, ultra-thin substrate, optimized P+, and 3D structure have been carried out in the design, bringing excellent performance of up to 250A current and maximum operating junction temperature of 175℃. With deep technical and process experience, i20 IGBT chip batch products have achieved excellent performance. In particular, in terms of product consistency and stability, which imported brands have been far ahead in the past, they have reached a world-class level, and have opened a new chapter in the high-level development of domestic IGBT chips. Saijing Semiconductor is committed to providing excellent domestic IGBT chips to a wide range of industry partners, breaking the domestic “missing core” dilemma that relies heavily on imported chips, and building a healthy domestic IGBT development ecosystem. New energy vehicles are not only...
Recently, IGBT chips independently developed by Saijing Asia Pacific Semiconductor Technology (Zhejiang) Co., Ltd. (hereinafter referred to as “Saijing Semiconductor”), a subsidiary of Saijing Technology, completed the first official batch delivery (in the form of wafers) to customers in the NEV passenger car market. This indicates that iGBT chips using Saijing i20 technology have been recognized by mainstream NEV manufacturers in the market and have begun to be sold in batches. In addition, Saijing Semiconductor's module products using entirely autonomous IGBT chips are also being tested and verified with new energy passenger vehicle customers. The IGBT chip independently developed by Saijing that was delivered this time has a rated voltage of 1200V and a rated current of 250A. Using the current mainstream FS-trench structure, many optimizations such as N-type reinforcement, narrow table surface, short channel, ultra-thin substrate, optimized P+, and 3D structure have been carried out in the design, bringing excellent performance of up to 250A current and maximum operating junction temperature of 175℃. With deep technical and process experience, i20 IGBT chip batch products have achieved excellent performance. In particular, in terms of product consistency and stability, which imported brands have been far ahead in the past, they have reached a world-class level, and have opened a new chapter in the high-level development of domestic IGBT chips. Saijing Semiconductor is committed to providing excellent domestic IGBT chips to a wide range of industry partners, breaking the domestic “missing core” dilemma that relies heavily on imported chips, and building a healthy domestic IGBT development ecosystem. New energy vehicles are not only...

The IGBT chip independently developed by Saijing that was delivered this time has a rated voltage of 1200V and a rated current of 250A. Using the current mainstream FS-trench structure, many optimizations such as N-type reinforcement, narrow table surface, short channel, ultra-thin substrate, optimized P+, and 3D structure have been carried out in the design, bringing excellent performance of up to 250A current and maximum operating junction temperature of 175℃. With deep technical and process experience, i20 IGBT chip batch products have achieved excellent performance. In particular, in terms of product consistency and stability, which imported brands have been far ahead in the past, they have reached a world-class level, and have opened a new chapter in the high-level development of domestic IGBT chips.
Saijing Semiconductor is committed to providing excellent domestic IGBT chips to a wide range of industry partners, breaking the domestic “missing core” dilemma that relies heavily on imported chips, and building a healthy domestic IGBT development ecosystem. New energy vehicles are not only a strategic emerging industry developed by the country and an important means of achieving the “double carbon” goal, but also one of the most important application areas of IGBT. Saijing Semiconductor attaches great importance to the research and development of automotive-grade IGBT chip technology and products, focuses on strengthening exchanges and cooperation with a wide range of electric drive electronic control and vehicle manufacturers, and is committed to helping China's NEV industry take off with domestic premium IGBTs.
Risk Disclaimer: The above content only represents the author's view. It does not represent any position or investment advice of Futu. Futu makes no representation or warranty.Read more
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